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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4506AF DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) *High Switching Speed APPLICATIONS *Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage VALUE 1500 800 7.5 5 UNIT V V Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak w ww scs .i V A 8 A 3 5 45 150 -65~150 A A W .cn mi e IBM PC TJ Tstg Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT /W Rth j-c isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU4506AF TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.75A B 0.98 1.0 2.0 1.0 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125 VEB= 7.5V; IC= 0 mA IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain Switching times (16kHz line deflection circuit) Storage Time Fall Time tstg tf w w scs .i w IC= 0.5A; VCE= 5V IC= 3A; VCE= 5V .cn mi e 4.2 mA 10 7.3 4.6 IC= 3A, IB1= 0.6A; IB2= -1.5A 0.45 s s isc Websitewww.iscsemi.cn 2 |
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